?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet april 2007 unifet tm fda16n50 500v n-channel mosfet features ? 16.5a, 500v, r ds(on) = 0.38 @v gs = 10 v ? low gate charge ( typical 32 nc) ?low c rss ( typical 20 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. absolute maximum ratings thermal characteristics gs d to-3p fda series d g s symbol parameter fda16n50 unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 16 .5 9. 9 a a i dm drain current - pulsed (note 1) 66 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 780 mj i ar avalanche current (note 1) 16.5 a e ar repetitive avalanche energy (note 1) 2 0.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 2 05 2.1 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c symbol parameter typ max unit r jc thermal resistance, junction-to-case -- 0.6 c/w r cs thermal resistance, case-to-sink typ. 0.24 -- c/w r ja thermal resistance, junction-to-ambient -- 40 c/w
2 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 5.1mh, i as = 16.5a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 16.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics device marking device package reel size tape width quantity fda16n50 fda16n50 to-3p - - 30 fda16n50 fda16n50_f109 to-3pn - - 30 symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 500 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 8.3a -- 0.31 0.38 g fs forward transconductance v ds = 40v, i d = 8.3a (note 4) -- 23 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1495 1945 pf c oss output capacitance -- 235 310 pf c rss reverse transfer capacitance -- 20 30 pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 16a r g = 25 (note 4, 5) -- 40 90 ns t r turn-on rise time -- 150 310 ns t d(off) turn-off delay time -- 65 140 ns t f turn-off fall time -- 80 170 ns q g total gate charge v ds = 400v, i d = 16a v gs = 10v (note 4, 5) -- 32 45 nc q gs gate-source charge -- 8.5 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9.2 a i sm maximum pulsed drain-source diode forward current -- -- 37 a v sd drain-source diode forward voltage v gs = 0v, i s = 16.5a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 16a di f /dt =100a/ s (note 4) -- 490 -- ns q rr reverse recovery charge -- 5.0 -- c
3 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681012 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.2 0.3 0.4 0.5 0.6 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 10203040 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 8.3 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.6 o c/w max. 2. d uty factor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec]
5 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
6 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
7 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet mechanical dimensions 15.60 0.20 4.80 0.20 13.60 0.20 9.60 0.20 2.00 0.20 3.00 0.20 1.00 0.20 1.40 0.20 ?3.20 0.10 3.80 0.20 13.90 0.20 3.50 0.20 16.50 0.30 12.76 0.20 19.90 0.20 23.40 0.20 18.70 0.20 1.50 +0.15 ?0.05 0.60 +0.15 ?0.05 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] to-3p dimensions in millimeters
8 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet mechanical dimensions to-3pn dimensions in millimeters
9 www.fairchildsemi.com fda16n50 rev. b fda16n50 500v n-channel mosfet trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make chang es without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or system s are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information formative or in design this datas heet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first producti on this datasheet contains prelimi nary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time wit hout notice to improve design. no identification needed full production this datasheet co ntains final specifications . fairchild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contai ns specifications on a product that has been dis- continued by fairchild semiconductor. the datasheet is printed for refer- ence information only. rev. i24 tm gto? powertrench ? tinybuck? tm
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